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Highly Improved Reliability of Low Threshold 1.3 μm III/V Quantum Dot Laser Epitaxially Grown on On-axis Si

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Abstract

InAs quantum dot Fabry-Perot lasers grown on on-axis (001) Si demonstrate record-low continuous-wave threshold current of 4.8 mA as well as excellent device reliability with extrapolated lifetimes more than ten million hours at 35 °C.

© 2018 The Author(s)

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