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Silicon Waveguide Coupled III-V Nanowire Lasers with Epitaxial Gain Control

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Abstract

We demonstrate lasing from individual GaAs-based NWs integrated onto Si ridge waveguides. In addition, proof-of-principle coupling emission to the Si WG is shown, with propagation distances of the lasing mode exceeding > 60 µm.

© 2018 The Author(s)

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