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Direct Pulse Position Modulation of a 410 nm Semipolar GaN Laser Diode for Space Optical Communications

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Abstract

A semipolar GaN laser was characterized for space optical communications, achieving a peak power of 160 mW. Periodic and random M-ary pulse position modulation sequences with pulse widths of 5 ns and 10 ns were demonstrated.

© 2018 The Author(s)

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