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A gallium arsenide nonlinear platform on silicon

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Abstract

A nonlinear platform using gallium arsenide (GaAs) waveguides cladded with SiO2 has been demonstrated on silicon substrates. It is suitable for efficient nonlinear applications. Second harmonic generation (SHG) with record-high efficiency of 38,000% W−1cm−2 has been achieved.

© 2018 The Author(s)

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