Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Direct Bandgap Type-I GeSn Quantum Well toward Si-based Optoelectronics

Not Accessible

Your library or personal account may give you access

Abstract

GeSn single quantum well on relaxed GeSn and Ge buffered Si substrate was investigated. The direct bandgap well and type-I band alignment were achieved, which were confirmed by calculation and photoluminescence studies.

© 2018 The Author(s)

PDF Article
More Like This
Study of SiGeSn/GeSn/SiGeSn Quantum Well towards All Group-IV-Optoelectronics

Wei Du, Seyed Ghetmiri, Sattar Al-Kabi, Joe Margetis, Yiyin Zhou, Wei Dou, Aboozar Mosleh, Jifeng Liu, Greg Sun, Richard Soref, John Tolle, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu
STh3I.3 CLEO: Science and Innovations (CLEO:S&I) 2017

Optical study of Ge0.95Sn0.05/Ge0.9Sn0.1/Ge0.95Sn0.05 quantum well towards group-IV based light source on Si

Wei Du, Seyed Ghetmiri, Sattar Al-Kabi, Aboozar Mosleh, Joe Margetis, John Tolle, Greg Sun, Richard A. Soref, Baohua Li, Hameed A. Naseem, Shui-Qing Yu, and Mansour Mortazavi
SF1P.4 CLEO: Science and Innovations (CLEO:S&I) 2016

Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si

Yiyin Zhou, Yuanhao Miao, Solomon Ojo, Grey Abernathy, Wei Du, Greg Sun, Richard Soref, Jifeng Liu, Yong-Hang Zhang, Mansour Mortazavi, Baohua Li, and Shui-Qing Yu
SM3M.4 CLEO: Science and Innovations (CLEO:S&I) 2020

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved