Abstract

We experimentally demonstrate the first all-optical Ternary Content Addressable Memory (T-CAM) cell based on two monolithic integrated InP Flip-Flops and a SOA-MZI XOR-gate, achieving 10Gb/s error-free operation during Content-Addressing and Write functionalities.

© 2018 The Author(s)

PDF Article
More Like This
First Demonstration of an Optical Content Addressable Memory (CAM) Cell at 10 Gb/s

S. Pitris, C. Vagionas, P. Maniotis, G. T. Kanellos, and N. Pleros
M3E.5 Optical Fiber Communication Conference (OFC) 2016

A 10Gb/s All-Optical Match-line for optical Content Addressable Memory CAM Rows

G. Mourgias-Alexandris, C. Vagionas, A. Tsakyridis, P. Maniotis, and N. Pleros
W2A.39 Optical Fiber Communication Conference (OFC) 2018

A 10Gb/s Optical Random-Access Memory using a saturated SOA-MZI fast Access Gate and a monolithic InP Flip-Flop

A. Tsakyridis, C. Vagionas, Th. Alexoudi, A. Miliou, and N. Pleros
STh4N.5 CLEO: Science and Innovations (CLEO_SI) 2019

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription