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Optically pumped Si-based edge-emitting GeSn laser

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Abstract

We present double heterostructure GeSn edge emitting laser. The structure was grown on a Si substrate using a commercial chemical vapor deposition with GeH4 and SnCl4. The lasing threshold of 68 KW/cm2 at 10K and maximum laser operating temperature of 110 K was achieved.

© 2017 Optical Society of America

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