Abstract
We describe fabrication and testing of LEDs based on emissive defect centers in Si and discuss our progress toward low-temperature on-chip integrated sources and detectors.
© 2017 Optical Society of America
PDF ArticleMore Like This
Jiming Bao, Malek Tabbal, Taegon Kim, Supakit Charnvanichborikarn, James S. Williams, Michael. J. Aziz, and Federico Capasso
JTuA95 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007
C. A. McDonald, S. M. Buckley, S. W. Nam, R. P. Mirin, G. Moody, J. M. Shainline, and K. L. Silverman
SF3A.5 CLEO: Science and Innovations (CLEO:S&I) 2018
Y-Q Li, PJ Edwards, and Z Huang
TuL43 International Quantum Electronics Conference (IQEC) 1996