Abstract
A detailed comparison of ultrafast electron emission from structured, silicon nano-tips driven by 800 nm and 2.1 µm pulses was performed. In the low energy portion of the spectrum, a saturation of the direct electron energy bandwidth to ≈1.6 eV for 800 nm and ≈ 1 eV for 2.1 µm was observed.
© 2017 Optical Society of America
PDF ArticleMore Like This
K. E. Echternkamp, F. Kusa, G. Herink, S. Ashihara, and C. Ropers
FM2K.7 CLEO: QELS_Fundamental Science (CLEO:FS) 2014
Hrvoje Petek
FTh4F.1 CLEO: QELS_Fundamental Science (CLEO:FS) 2017
P.D. Keathley, M.E. Swanwick, A. Fallahi, L. F. Velásquez-García, and F.X. Kärtner
JW2A.112 CLEO: Applications and Technology (CLEO:A&T) 2014