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Conferences > CLEO_SI > 2016 > SW1M > SW1M.4

Dramatic and previously overlooked interaction between strain and parasitic absorption in germanium with major implications for Si-compatible lasing

Shashank Gupta, Jan Petykiewicz, Donguk Nam, David Sukhdeo, Jelena Vuckovic, and Krishna Saraswat

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Abstract

Extensive modeling and experiments demonstrate a dramatic reduction in parasitic absorption with strain due to a previously overlooked mechanism. A special resonance at 4-5% uniaxial strain indicates that this is the optimal strain level for a room temperature Ge laser.

© 2016 Optical Society of America

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