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Direct Growth of High-Power InGaN/GaN Quantum-Disks-in-Nanowires Red Light-Emitting Diodes on Polycrystalline Molybdenum Substrates

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Abstract

The first high-power InGaN/GaN quantum-disks-in-nanowires red (λ=705 nm) light-emitting diodes on metal substrates was demonstrated. The low turn-on voltage and high power were achieved through the direct growth of high-quality nanowires on TiN/Ti/Mo stack.

© 2016 Optical Society of America

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