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High Yield Fabrication of SPSL-Based DUVLEDs on 6-inch Sapphire Substrates

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Abstract

Deep ultraviolet light emitting diodes (DUVLEDs) are fabricated using plasma assisted molecular beam epitaxy (PA-MBE) AlGaN films grown on 6-inch c-plane sapphire substrates with focus on yield and external quantum efficiency (EQE).

© 2016 Optical Society of America

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