Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO_SI > 2016 > STu3R > STu3R.6

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Ahmed Fadil, Yiyu Ou, Daisuke Iida, Oleksii Kopylov, and Haiyan Ou

Not Accessible

Your library or personal account may give you access

Abstract

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

© 2016 Optical Society of America

PDF Article
More Like This
Polarized Light-emitting Diode with Its InGaN/GaN Quantum Well Coupled with Surface Plasmons on a Metal Grating

Cheng-Yen Chen, Kun-Ching Shen, Jyh-Yang Wang, Hung-Lu Chen, Chi-Feng Huang, Yean-Woei Kiang, and C. C. Yang
CMOO3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009

Enhanced Surface Plasmon Coupling Effect with a Metal/SiO2/GaN Structure for Further Improving the Emission Efficiency of a Light-emitting Diode

Kun-Ching Shen, Cheng-Yen Chen, Yen-Cheng Lu, Che-Hao Liao, Chih-Yen Chen, Chieh Hsieh, and C. C. Yang
JTuD28 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010

Enhancement of Polarized Light-emitting Diode through Surface Plasmon Coupling Generated on a Metal Grating

Kun-Ching Shen, Cheng-Yen Chen, Che-Hao Liao, Tsung-Yi Tang, and C. C. Yang
TuN5 Asia Communications and Photonics Conference and Exhibition (ACP) 2009

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use