Abstract
A 250 nm deep UV LED is realized on the bulk AlN substrate. Leakage current is reduced significantly. Polarization doping is used for the p-region and GaN active region to enhance the light extraction.
© 2016 Optical Society of America
PDF ArticleMore Like This
Shyam Bharadwaj, Kevin Lee, SM Islam, Vladimir Protasenko, Huili (Grace) Xing, and Debdeep Jena
STh1C.6 CLEO: Science and Innovations (CLEO:S&I) 2017
H. Hirayama, Y. Tomita, S. Toyoda, S. Fujikawa, and N. Kamata
WH2_2 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2013
Gregory A. Garrett, Hongen Shen, Michael Wraback, James R. Grandusky, Shawn Gibb, and Leo J. Schowalter
CTuCC4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010