Optical imaging of the valley Hall effect in two-dimensional semiconductors

Jie Shan

doi:10.1364/CLEO_SI.2016.STu3F.1

Conference on Lasers and Electro-Optics
OSA Technical Digest (2016) (Optica Publishing Group, 2016),
paper STu3F.1
•https://doi.org/10.1364/CLEO_SI.2016.STu3F.1

Optical imaging of the valley Hall effect in two-dimensional semiconductors

Jie Shan

CLEO: Science and Innovations 2016

San Jose, California United States
5–10 June 2016
ISBN: 978-1-943580-11-8

From the session
Symposium on Nanophotonics with 2D Materials I (STu3F)

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J. Shan, "Optical imaging of the valley Hall effect in two-dimensional semiconductors," in Conference on Lasers and Electro-Optics, OSA Technical Digest (2016) (Optica Publishing Group, 2016), paper STu3F.1.

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Abstract

Valley Hall effect, in which a transverse valley current is formed under a longitudinal electrical bias in the absence of a magnetic field, is imaged by Kerr rotation microscopy and controlled electrically in 2D MoS2.

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