Abstract
We study the role of carrier excitation in driving either heat deposition or non-thermal molecular mobility via electronic relaxation in ultrafast laser-irradiated chalcogenide S-based glasses. We show the influence of doping and of the glass thermal history in determining permanent positive and negative refractive index change regimes (type I or type II) discussing the case of Ge15As15S70 chalcogenide glass. We also point out material and index engineering approaches in defining large mode area light transport concepts in evanescently-coupled waveguide arrays and their application for building embedded detectors for astronomical measurements.
© 2016 Optical Society of America
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