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Conferences > CLEO_SI > 2016 > SM4R > SM4R.4

Quantum Well Intermixing in 2 μm InGaAs Multiple Quantum Well structures

J. Baig, B. Roycroft, J. O’Callaghan, C. Robert, N. Ye, M. Gleeson, A. Gocalinska, E. Pelucchi, P. Townsend, and B. Corbett

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Abstract

Quantum well intermixing in 2μm emitting structures is presented for the first time. A photoluminescence and electroluminescence differential shift of 160nm is achieved between SiNx and SiO2 capped regions demonstrating potential for monolithic integration.

© 2016 Optical Society of America

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