Abstract

Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.

© 2016 Optical Society of America

PDF Article
More Like This
Passivation of optically black silicon wafers by atomic layer deposited Al2O3 films

Martin Otto, Matthias Kroll, Thomas Käsebier, Roland Salzer, Johannes Ziegler, Alexander Sprafke, and Ralf B. Wehrspohn
PW1B.3 Optical Nanostructures and Advanced Materials for Photovoltaics (PV) 2012

The effect of Al2O3 film on the mechanical properties of optical fiber based on atomic layer deposition

Yan Wu, Yana Shang, Fufei Pang, Yanan Kang, Jianxiang Wen, Zhenyi Chen, and Tingyun Wang
Su2A.100 Asia Communications and Photonics Conference (ACPC) 2017

Second-harmonic generation from ZnO/Al2O3 laminate optical metamaterials grown by atomic-layer deposition

Andreas Wickberg, Clemens Kieninger, Christoph Sürgers, Christian Koos, and Martin Wegener
FM1D.2 CLEO: QELS_Fundamental Science (CLEO_QELS) 2016

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription