Abstract
We present a high-performance InGaN/GaN heterojunction phototransistor with the responsivity (Rλ)> 8 (A/W), low noise-equivalent-power (NEP)< 1.1×10−17 (W-Hz−0.5) and high detectivity (D*)> 1.2×1014 (cm-Hz0.5-W−1).
© 2015 Optical Society of America
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