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III-V Nanopillar Phototransistor Directly Grown on Silicon

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Abstract

We demonstrate InP nanopillar bipolar junction phototransistors monolithically integrated on a Silicon substrate. With a responsivity of 4 A/W and bandwidth of 7.5 GHz, these receivers indicate a route towards efficient on-chip optical interconnects.

© 2015 Optical Society of America

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