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Conferences > CLEO_SI > 2015 > SW3F > SW3F.4

1.3-μm InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Bonding

Yuan-Hsuan Jhang, Katsuaki Tanabe, Satoshi Iwamoto, and Yasuhiko Arakawa

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Abstract

We demonstrate InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-stripe wafer bonding technology. Our III-V-on-Si bonded laser exhibits room-temperature lasing at 1.3 μm with current injection through the bonding metal stripe.

© 2015 Optical Society of America

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