Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

5 × 20 Gb/s III-V on Silicon Electroabsorption Modulator Array Heterogeneously Integrated with a 1.6nm Channel-Spacing Silicon AWG

Not Accessible

Your library or personal account may give you access

Abstract

We demonstrate a five-channel wavelength division multiplexed modulator module that heterogeneously integrates a 1.6nm channel-spacing arrayed-waveguide grating and a 20Gbps electroabsorption modulator array, showing the potential for 100 Gbps capacity on a 1.5×0.5 mm2 footprint.

© 2015 Optical Society of America

PDF Article
More Like This
Monolithic Silicon Chip with 10 Modulator Channels at 25 Gbps and 100-GHz Spacing

Long Chen, Christopher R. Doerr, Po Dong, and Young-kai Chen
Th.13.A.1 European Conference and Exposition on Optical Communications (ECOC) 2011

Integrated 5-channel WDM hybrid III-V/Si transmitter enabling 100Gb/s and beyond

G. de Valicourt, C. M. Chang, S. Chandrasekhar, Y. K. Chen, A. Maho, R. Brenot, and P. Dong
Th1B.4 Optical Fiber Communication Conference (OFC) 2017

Above 40 Gb/s Direct Modulation of a Heterogeneously integrated III-V-on-silicon DFB Laser

A. Abbasi, J. Verbist, X. Yin, F. Lelarge, G-H Duan, J. Bauwelinck, G. Roelkens, and G. Morthier
LTu2D.3 Latin America Optics and Photonics Conference (LAOP) 2016

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved