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A Direct Band Gap GeSn Laser on Si

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Abstract

Temperature-dependent photoluminescence spectroscopy reveals that partially strain-relaxed Ge0.87Sn0.13 exhibits a fundamental direct band gap. For such an alloy, we show lasing at ≈ 2.3 μm emission wavelength under optical pumping up to 90 K.

© 2015 Optical Society of America

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