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Conferences > CLEO_SI > 2015 > SM2G > SM2G.4

Diffusion Characterization Using Electron Beam Induced Current and Time-Resolved Photoluminescence of InAs/InAsSb Type-II Superlattices

D. Zuo, R. Liu, J. Mabon, Z.-Y. He, S. Liu, Y.-H. Zhang, E. A. Kadlec, B. Olson, E. A. Shaner, and D. Wasserman

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Abstract

We present the characterization of minority carrier diffusion length and surface recombination velocity, as well as vertical diffusivity and mobility by performing an electron beam induced current measurement in addition to an optical lifetime measurement.

© 2015 Optical Society of America

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