Low-temperature PECVD grown carbon-rich silicon carbide saturable absorber for sub-picosecond passively mode-locked fiber lasers

Chih-Hsien Cheng; Gong-Ru Lin

doi:10.1364/CLEO_SI.2014.STu1N.5

CLEO: 2014
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper STu1N.5
•https://doi.org/10.1364/CLEO_SI.2014.STu1N.5

Low-temperature PECVD grown carbon-rich silicon carbide saturable absorber for sub-picosecond passively mode-locked fiber lasers

Chih-Hsien Cheng and Gong-Ru Lin

CLEO: Science and Innovations 2014

San Jose, California United States
8–13 June 2014
ISBN: 978-1-55752-999-2

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Mode-locked Fiber Lasers (STu1N)

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C. Cheng and G. Lin, "Low-temperature PECVD grown carbon-rich silicon carbide saturable absorber for sub-picosecond passively mode-locked fiber lasers," in CLEO: 2014, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper STu1N.5.

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Abstract

The low-temperature PECVD grown carbon-rich silicon carbide film with thickness of 200 nm is employed to passively mode-lock the fiber laser with pulsewidth of 510 fs and linewidth of 5.46 nm.

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