Low-threshold InGaAs/GaAsSb ‘W’-type quantum well laser on InP substrate

Chia-Hao Chang; Zong-Lin Li; Hong-Ting Lu; Sheng-Di Lin

doi:10.1364/CLEO_SI.2014.STh3G.1

CLEO: 2014
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper STh3G.1
•https://doi.org/10.1364/CLEO_SI.2014.STh3G.1

Low-threshold InGaAs/GaAsSb ‘W’-type quantum well laser on InP substrate

Chia-Hao Chang, Zong-Lin Li, Hong-Ting Lu, and Sheng-Di Lin

CLEO: Science and Innovations 2014

San Jose, California United States
8–13 June 2014
ISBN: 978-1-55752-999-2

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Quantum Cascade Lasers I (STh3G)

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C. Chang, Z. Li, H. Lu, and S. Lin, "Low-threshold InGaAs/GaAsSb ‘W’-type quantum well laser on InP substrate," in CLEO: 2014, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper STh3G.1.

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Abstract

The mid-infrared electrically-driven laser using InGaAs/GaAsSb ‘W’-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 μm with the lowest threshold current density of 1.42 kA/cm² is presented.

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