Abstract

We demonstrate the possibility of forming ultra-compact, field-configurable, and low-power resonance-based passive integrated photonic structures based on charge accumulation in a high-quality multilayer material platform comprising Si/SiO2/Si layers prepared through direct bonding of SOI wafers.

© 2014 Optical Society of America

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More Like This
Highly uniform and low-loss passive silicon photonics devices using a 300mm CMOS platform

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