Abstract

The application of a specific metal organice vapour phase epitaxy (MOVPE) growth process for (GaIn)As-based VECSEL using thermally more efficiently decomposing MO-group-V-sources results in an extended wavelength range and facilitates the necessary strain compensation of the highly compressive-strained (GaIn)As-quantum well layers by tensile-strained Ga(PAs) barrier layers. Applying a closed-loop-design concept of detailed microscopic modelling [1] and experimental realization as well as laser characterization allows for an efficient optimization of these complex laser devices.

© 2014 Optical Society of America