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GaAs Electrically Injected Exciton-Polariton Laser

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Abstract

Electrically injected polariton lasing from a GaAs-based modulation-doped microcavity diode has been demonstrated under an applied magnetic field of 7 Tesla at 30 K. Polariton lasing and condensation characteristics have been measured and analyzed.

© 2013 Optical Society of America

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