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Conferences > CLEO_SI > 2013 > CF1M > CF1M.5

GaN-Based Dual Color LEDs with P-Type Insertion Layer for Balancing Two-Color Intensities

Kai-Lun Chi, Shu-Ting Yeh, Yu-Hsiang Yeh, Kun-Yan Lin, Jin-Wei Shi, Yuh-Renn Wu, and J.-K. Sheu

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Abstract

By inserting p-type layers into active regions of dual-color GaN LEDs to uniform carrier distribution, the output intensities from quantum-wells near n- and p-sides can be balanced under a low driving-current density (< 45 A/cm2).

© 2013 Optical Society of America

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