Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO_SI > 2012 > CTh3D > CTh3D.6

Highly-Strained Germanium as a Gain Medium for Silicon-Compatible Lasers

Devanand Sukhdeo, Donguk Nam, Szu-Lin Cheng, Ze Yuan, Arunanshu Roy, Kevin Chih-Yao Huang, Mark Brongersma, Yoshio Nishi, and Krishna Saraswat

Not Accessible

Your library or personal account may give you access

Abstract

Germanium-on-silicon lasers have recently been demonstrated. Our theoretical modeling shows that increasing germanium’s strain to 1.1%, which we show is achievable, can reduce the threshold for net gain by over a factor of 20.

© 2012 Optical Society of America

PDF Article
More Like This
Strained Germanium Membrane using Thin Film Stressor for High Efficiency Laser

Donguk Nam, Arunanshu M. Roy, Kevin C. Y. Huang, Mark L. Brongersma, and Krishna C. Saraswat
JTuI85 CLEO: Applications and Technology (CLEO:A&T) 2011

Process-Induced Strain Bandgap Reduction in Germanium Nanostructures

Philippe Velha, Douglas J. Paul, Maksym Myronov, and David R. Leadley
CTh3D.1 CLEO: Science and Innovations (CLEO:S&I) 2012

Emerging optical gain in highly strained Germanium

F. Armand Pilon, N. Pauc, J. Widiez, V. Reboud, V. Calvo, J.M. Hartmann, A. Chelnokov, J. Faist, and H. Sigg
ITu4I.3 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2018

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use