Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO_SI > 2012 > CM2L > CM2L.2

Efficient Terahertz Generation from InGaN/GaN Dot-in-a-Wire Nanostructure

Guan Sun, Ruolin Chen, Pu Zhao, Yujie J. Ding, Hieu P. T. Nguyen, and Zetian Mi

Not Accessible

Your library or personal account may give you access

Abstract

InGaN/GaN dot-in-a-wire nanostructure grown on Si(111) is extremely efficient for terahertz generation. The highest output power is measured to be 300 nW just from ten vertically stacked quantum dots in each quantum wire.

© 2012 Optical Society of America

PDF Article
More Like This
Enhanced Terahertz Generation from InGaN/GaN Dot-in-a-Wire Light Emitting Diodes

Guan Sun, Ruolin Chen, Yujie J. Ding, Hieu P. T. Nguyen, and Zetian Mi
JTh2A.57 CLEO: QELS_Fundamental Science (CLEO:FS) 2013

High Efficiency InGaN/GaN Dot-in-a-Wire Light Emitting Diodes Grown by Molecular Beam Epitaxy on Si(111)

H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi
CMU4 CLEO: Science and Innovations (CLEO:S&I) 2011

InGaN / GaN nanostructures for efficient LEDs

P. Daniel Dapkus, Ting Wei Yeh, and Yenting Lin
AS1F.2 Asia Communications and Photonics Conference (ACP) 2012

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use