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AlGaN-based Deep Ultraviolet LEDs by Plasma assisted Molecular Beam Epitaxy

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Abstract

We report the development of AlGaN-based deep UV LEDs by RF plasma-assisted MBE. Devices emitting at 273 nm were evaluated at bare-die configuration and found to have an output power of 1.3 mW at 100 mA injection current and external quantum efficiency of 0.4%.

© 2011 Optical Society of America

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