Time-resolved photoluminescence studies of Mid-UV AlGaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy reveal improved internal quantum efficiencies with increased carrier localization related to chemical ordering.
© 2011 Optical Society of America
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
Login to access OSA Member Subscription