Helically Propagating Modes in InGaAs Nanoneedle Lasers Grown on Poly-Silicon and Silicon Substrates

Thai-Truong Tran; Roger Chen; Kar Wei Ng; Wai Son Ko; Fanglu Lu; Connie J. Chang-Hasnain

doi:10.1364/CLEO_SI.2011.CTuR3

CLEO: Science and Innovations 2011

Baltimore, Maryland United States
1–6 May 2011
ISBN: 978-1-55752-910-7

From the session
Advances in III-V Lasers (CTuR)

Helically Propagating Modes in InGaAs Nanoneedle Lasers Grown on Poly-Silicon and Silicon Substrates

Thai-Truong Tran, Roger Chen, Kar Wei Ng, Wai Son Ko, Fanglu Lu, and Connie J. Chang-Hasnain

CLEO:2011 - Laser Applications to Photonic Applications
OSA Technical Digest (CD) (Optical Society of America, 2011),
paper CTuR3
•https://doi.org/10.1364/CLEO_SI.2011.CTuR3

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T. Tran, R. Chen, K. W. Ng, W. S. Ko, F. Lu, and C. J. Chang-Hasnain, "Helically Propagating Modes in InGaAs Nanoneedle Lasers Grown on Poly-Silicon and Silicon Substrates," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper CTuR3.

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The topics in this list come from the OSA Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Modes (030.4070)
- Semiconductor lasers (250.5960)
- Nanophotonics and photonic crystals (350.4238)

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Abstract

InGaAs nanoneedle lasers were grown on both, polycrystalline-Si and (100)-Si substrates by low temperature (400 °C) MOCVD. Measured near field mode patterns agree well with FDTD simulations, confirming helically propagating modes as lasing modes.

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CLEO: Science and Innovations 2011

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