Abstract

Our GaAs quantum dots device exhibits ultra-low noise as evidenced by optical linewidths close-to the ideal limit, an elimination of blinking, charge locked by Coulomb blockade, high-fidelity spin initialization, and a long electron-spin lifetime.

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More Like This
THz radiation from a GaAs/AlAs superlattice in a p-i-n diode

Hiroshi Takahashi, Hiroshi Kuwano, Taro Itatani, Yasuhiko Tanuma, Takeyoshi Sugaya, Tadashi Nakagawa, Ming Li, and X. -C. Zhang
PD2 Ultrafast Electronics and Optoelectronics (UEO) 1999

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CI_P4 The European Conference on Lasers and Electro-Optics (CLEO_Europe) 2009