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Conferences > CLEO_QELS > 2021 > FW4I > FW4I.1

Low-noise GaAs quantum dots in a p-i-n diode

Liang Zhai, Giang N. Nguyen, Matthias C. Löbl, Clemens Spinnler, Alisa Javadi, Julian Ritzmann, Andreas D. Wieck, Arne Ludwig, and Richard J. Warburton

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Abstract

Our GaAs quantum dots device exhibits ultra-low noise as evidenced by optical linewidths close-to the ideal limit, an elimination of blinking, charge locked by Coulomb blockade, high-fidelity spin initialization, and a long electron-spin lifetime.

© 2021 The Author(s)

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