Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

Not Accessible

Your library or personal account may give you access

Abstract

Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2×1016WHz12 noise equivalent power.

© 2019 The Author(s)

PDF Article
More Like This
Ge-on-Si Single-Photon Avalanche Diode Detectors with Low Noise Equivalent Power in the Short-Wave Infrared

Ross W. Millar, Jaroslaw Kirdoda, Fiona Thorburn, Laura L. Huddleston, Derek C.S. Dumas, Zoë M. Greener, Kateryna Kuzmenko, Peter Vines, Lourdes Ferre-Llin, Xin Yi, Scott Watson, Bhavana Benakaprasad, Angus Bruce, Gerald S. Buller, and Douglas J. Paul
ce_2_2 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2021

Ge-on-Si High Efficiency SPADs at 1310 nm

Derek C.S. Dumas, Jarosław Kirdoda, Peter Vines, Kateryna Kuzmenko, Ross W. Millar, Gerald S. Buller, and Douglas J. Paul
ea_p_15 European Quantum Electronics Conference (EQEC) 2019

Ge-on-Si Single Photon Avalanche Diode Detectors for LIDAR in the Short Wave Infrared

Ross W. Millar, Jaroslaw Kirdoda, Kateryna Kuzmenko, Peter Vines, Abderrahim Halimi, Robert J. Collins, Aurora Maccarone, Aongus McCarthy, Zoe M. Greener, Fiona Thorburn, Derek C.S. Dumas, Lourdes Ferre-Llin, Muhammad M. Mirza, Douglas J. Paul, and Gerald S. Buller
AF2I.6 CLEO: Applications and Technology (CLEO:A&T) 2020

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved