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Room-temperature optoelectronic detection of valley-locked spin photocurrent in WSe2-graphene-Bi2Se3 heterostructures

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Abstract

Using a lateral WSe2-graphene-Bi2Se3 heterostructure, we generate the valley-locked spin photocurrent in ion-liquid gated WSe2 transistor by the circular photogalvanic effect and extract the spin-polarized current in the Bi2Se3 topological insulator using the spin-momentum locking.

© 2018 The Author(s)

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