Graphene-induced Strong Quenching of Optical Phonons in III-V Semiconductor Heterostructures

Peter Q. Liu; John L. Reno; Igal Brener

doi:10.1364/CLEO_QELS.2017.FTh3F.8

Conference on Lasers and Electro-Optics
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper FTh3F.8
•https://doi.org/10.1364/CLEO_QELS.2017.FTh3F.8

Graphene-induced Strong Quenching of Optical Phonons in III-V Semiconductor Heterostructures

Peter Q. Liu, John L. Reno, and Igal Brener

CLEO: QELS_Fundamental Science 2017

San Jose, California United States
14–19 May 2017
ISBN: 978-1-943580-27-9

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Ultrafast Lattice and Molecular Dynamics (FTh3F)

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P. Q. Liu, J. L. Reno, and I. Brener, "Graphene-induced Strong Quenching of Optical Phonons in III-V Semiconductor Heterostructures," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2017), paper FTh3F.8.

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Abstract

We demonstrate that monolayer graphene transferred onto III-V semiconductor heterostructures induces strong quenching of the optical phonons in III-V semiconductor epilayers. Such graphene-induced optical phonon quenching is even stronger than that of thin metal films.

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