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Conferences > CLEO_QELS > 2016 > FTu4C > FTu4C.2

Sinusoidally Gated InGaAs/InP Avalanche Photodiode with 53% Photon Detection Efficiency at 1550 nm

Akiko Tada, Naoto Namekata, and Shuichiro Inoue

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Abstract

We report on the high-efficiency single-photon detector at 1550 nm using an InGaAs/InP avalanche photodiode gated with 50-Vp-p sinewave. The saturated photon detection efficiency of 53.7% was obtained without significant increase of afterpulse probability.

© 2016 Optical Society of America

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