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Large enhancement in photoluminescence of ZnO grown on strain relaxed nanoporous GaN template by PLD

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Abstract

ZnO thin film was grown over nanoporous GaN by PLD. Up to 8-fold PL intensity enhancement has been achieved. This is attributed to relieved misfit stress and reduced defect density.

© 2014 Optical Society of America

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This paper was not presented at the conference

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