Quantum State Engineering for High Efficiency Quantum Memories and Cavity Line Narrowing

M. Sabooni; Qian Li; D. Serrano; S. Kröll; L. Rippe

doi:10.1364/CLEO_QELS.2014.FF2A.1

CLEO: 2014
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper FF2A.1
•https://doi.org/10.1364/CLEO_QELS.2014.FF2A.1

Quantum State Engineering for High Efficiency Quantum Memories and Cavity Line Narrowing

M. Sabooni, Qian Li, D. Serrano, S. Kröll, and L. Rippe

CLEO: QELS_Fundamental Science 2014

San Jose, California United States
8–13 June 2014
ISBN: 978-1-55752-999-2

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Quantum Memories (FF2A)

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M. Sabooni, Q. Li, D. Serrano, S. Kröll, and L. Rippe, "Quantum State Engineering for High Efficiency Quantum Memories and Cavity Line Narrowing," in CLEO: 2014, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper FF2A.1.

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Abstract

A 56% efficiency quantum memory is created by inserting a <1% efficiency memory in a low-finesse cavity. Changing the memory absorption profile by optical pumping decreases the cavity mode-spacing by >4 orders of magnitude.

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