Phonon-assisted Bandtail Anti-Stokes Photoluminescence of GaN: Novel Mechanism for Laser Cooling

Guan Sun; Ruolin Chen; Yujie J. Ding

doi:10.1364/CLEO_QELS.2013.QTu1E.2

CLEO: 2013
OSA Technical Digest (online) (Optica Publishing Group, 2013),
paper QTu1E.2
•https://doi.org/10.1364/CLEO_QELS.2013.QTu1E.2

Phonon-assisted Bandtail Anti-Stokes Photoluminescence of GaN: Novel Mechanism for Laser Cooling

Guan Sun, Ruolin Chen, and Yujie J. Ding

CLEO: QELS_Fundamental Science 2013

San Jose, California United States
9–14 June 2013
ISBN: 978-1-55752-972-5

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Laser Cooling and Novel Pheonomena (QTu1E)

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G. Sun, R. Chen, and Y. J. Ding, "Phonon-assisted Bandtail Anti-Stokes Photoluminescence of GaN: Novel Mechanism for Laser Cooling," in CLEO: 2013, OSA Technical Digest (online) (Optica Publishing Group, 2013), paper QTu1E.2.

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Abstract

Anti-Stokes photoluminescence (ASPL) of n-type GaN is observed at room temperature. By studying behaviors of ASPL, the mechanism is identified as phonon-assisted bandtail photoluminescence. Such a process results in laser cooling.

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