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Enhanced Terahertz Generation from InGaN/GaN Dot-in-a-Wire Light Emitting Diodes

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Abstract

Efficient Terahertz output is generated from InGaN/GaN dot-in-a-wire light emitting diodes (LEDs) grown on Si(111). Under reverse bias, the THz output power is enhanced more than 4 times.

© 2013 Optical Society of America

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