Abstract

Quasi-phase-matched orientation-patterned GaP (OP-GaP) is an attractive technology for achieving mid-IR and terahertz (THz) radiation enabled by nonlinear frequency conversion, because of its low two-photon absorption (2PA) down to 1 μm. High crystalline quality of OP-GaP template and subsequent thick layer growth is required to exploit the benefit of low 2PA of GaP pumped with short wavelength lasers [1]. In this work, we present the development of heteroepitaxial growth of OP-GaP on wafer fused OP-GaAs template with high growth rate and good domain fidelity. The conductivity of the GaP grown on planar GaAs was investigated in the THz region.

© 2019 IEEE

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