Abstract

In this work we present model calculations and experimental verification of the giant nonlinear coefficients provided by intersubband transitions in hole-doped Ge/SiGe and Si/SiGe asymmetric quantum wells in the mid-infrared. We develop a model for the valence band-structure of the SiGe alloy including heavy-hole, light-hole and split-off bands for any value of Ge concentration, so as to obtain heterojunction parameters for the calculation of the wavefunction of confined hole states in quantum wells.

© 2019 IEEE

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