Abstract

We report experimental evidence of coexistence between passive mode-locking (ML) solutions and laser off state in a monolithic two sections InAs/InGaAs Quantum Dot (QD) semiconductor laser. The considered device has a 0.4 mm long straight absorber and a 2.380 mm long active region characterized by a 2° full taper angle. The active side facet is as cleaved, while the absorber side facet is high reflection coated.

© 2019 IEEE

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