We report experimental evidence of coexistence between passive mode-locking (ML) solutions and laser off state in a monolithic two sections InAs/InGaAs Quantum Dot (QD) semiconductor laser. The considered device has a 0.4 mm long straight absorber and a 2.380 mm long active region characterized by a 2° full taper angle. The active side facet is as cleaved, while the absorber side facet is high reflection coated.

© 2019 IEEE

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription