Abstract

850 nm vertical-cavity surface-emitting lasers (VCSELs), the standard light sources in transmitters for short-range data centre interconnects, have been devoted to improving their high-speed characteristics to meet the rapidly growing data traffic demand. The high-speed characteristics have been investigated by the incorporation of InGaAs quantum wells (QWs) design to increase the modulation bandwidth[1], oxide-confined aperture to reduce threshold current[2], and benzocyclobutene (BCB) passivation layer to reduce parasitic capacitance[3]. In this report, we demonstrate the microwave characteristics of an 850 nm oxide-confined InGaAs quantum well (QW) VCSEL with an oxide aperture diameter and threshold current of 4.23-μm and 0.35 mA, which achieves the non-return-to-zero (NRZ) ON-OFF keying (OOK) modulation is performed with 54 Gb/s back-to-back error-free data transmission.

© 2019 IEEE

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