Abstract

Passively mode-locked (PML) InAs/InGaAs quantum dot (QD) lasers directly grown on silicon and emitting at 1310 nm are promising sources for high-speed, high-capacity communication applications. To overcome the low light generation efficiency of silicon, QD are directly grown on Si [1]. Their ultrafast carrier dynamics, broadband gain spectra and easily saturated gain and absorption allow for the generation of ultra-short optical pulses as demonstrated very recently [2]. The QD laser epitaxial growth was completed on an on-axis (001) Si substrate with a 45 nm GaP buffer layer by solid-source molecular beam epitaxy [3].

© 2019 IEEE

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