Type-I quantum well (QW) lasers based on the GaSb material system show attractive characteristics in the midinfrared [1]. However, as the wavelength (λ) increases in the range of 2-4 μm their performance begins to deteriorate due to increasing Auger recombination [2]. In the Auger process, the energy released from an electron-hole recombination is transferred to a third carrier. In order to develop strategies to suppress Auger recombination, it is crucial to understand the magnitude and nature of the dominant Auger recombination pathway, and their dependencies on the operating λ and temperature (T).

© 2019 IEEE

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